2N4240 datasheet(1/3 Pages) MICROSEMI

部品番号	2N4240

部品情報	5 Amp, 500V, High Voltage NPN Silicon Power Transistors

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メーカー	MICROSEMI [Microsemi Corporation]

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MSC1058.PDF 05-19-99

2N4240

ABSOLUTE MAXIMUM RATINGS:

SYMBOL

CHARACTERISTIC

VALUE

UNITS

VCBO*

Collector-Base Voltage

500

Volts

VCEO*

Collector-Emitter Voltage

300

Volts

VCER*

Collector-Emitter Voltage RBE = 50Ω

Ω

400

Volts

VEBO*

Emitter-Base Voltage

6

Volts

IC*

Peak Collector Current

5

Amps

IC*

Continuous Collector Current

2

Amps

IB*

Base Current

1

Amps

TSTG*

Storage Temperature

-65 to 200

°°C

TJ*

Operating Junction Temperature

-65 to 200

°°C

*

Lead Temperature 1/16" from Case for 10 Sec.

235

°°C

PT*

θθ JC

Power Dissipation

TC = 25°°C

Thermal Impedance

35

5.0

Watts

°°C/W

5 Amp, 500V,

High Voltage

NPN Silicon Power

Transistors

TO-66

APPLICATIONS:

•

Off-Line Inverters

•

Deflection Circuits

•

Switching Regulators

•

DC-DC Converters

•

Motor Controls

•

High Voltage Amplifiers

7516 Central Industrial Drive

Riviera Beach, Florida

33404

PHONE: (561) 842-0305

FAX: (561) 845-7813

DESCRIPTION:

These power transistors are produced by PPC's DOUBLE

DIFFUSED PLANAR process. This technology produces high

voltage devices with excellent switching speeds, frequency

response, gain linearity, saturation voltages, high current gain,

and safe operating areas. They are intended for use in

Commercial, Industrial, and Military power switching, amplifier,

and regulator applications.

Ultrasonically bonded leads and controlled die mount

techniques are utilized to further increase the SOA capability

and inherent reliability of these devices. The temperature

range to 200

°°C permits reliable operation in high ambients, and

the hermetically sealed package insures maximum reliability

and long life.

*

Indicates JEDEC registered data.

FEATURES:

•

High Voltage: 250 to 500V

•

High Current: 2 Amps

•

Fast Switching: tf < 3µ

µ sec.

•

Low VCE (SAT)

•

High Power: 35 Watts

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