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MM196 データシート(PDF) 1 Page - Microsemi Corporation

部品番号 MM196
部品情報  6 MOSFET Multi-Chip Module
PDF  1 Pages
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メーカー  MICROSEMI [Microsemi Corporation]
ホームページ  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

MM196 データシート(HTML) 1 Page - Microsemi Corporation

  MM196 Datasheet HTML 1Page - Microsemi Corporation  
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Microsemi
Santa Ana Division
2830 S. Fairview Street, CA. 92704, 714-979-8220, Fax: 714-557-5989
Page 1
Copyright
 2000
MSC1589.PDF ,2000-09-20
MM196
6 MOSFET Multi-Chip Module
PRELIMINARY SPECIFICATION
SAN T A ANA DIV I S I ON
DESCRIPTION
The MM196 is a Multi-Chip Module, MCM, incorporating 6 independent
MOSFET die into a convenient BGA package. This device is also available
as discrete individual packaged Powermite3, see Microsemi data sheet
UPF1N100. This device is also available as bare die, see Microsemi data
sheet MSAFA1N100D. The MM196 allows users to externally connect the
MOSFETs via a motherboard or next assembly substrate into any
configuration desired. Custom variations of this product incorporating other
Microsemi protection die and/or passive components are available by
contacting the factory.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
INDIVIDUAL COM P ONENT
INDIVIDUAL COM P ONENT
INDIVIDUAL COM P ONENT
INDIVIDUAL COM P ONENT SP ECIFI CAT IONS
SP ECIFI CAT IONS
SP ECIFI CAT IONS
SP ECIFI CAT IONS
Components
Manufacturer
Part Number
Q1 – Q6
Microsemi Santa Ana
MSAFA1N100D
Characteristics
Note: Refer to individual data sheets for component performance.
If there are conflicting requirements, this document takes precedence.
Ma xi mu m Ra tin g s @ 25 ºC
Ma xi mu m Ra tin g s @ 25 ºC
Ma xi mu m Ra tin g s @ 25 ºC
Ma xi mu m Ra tin g s @ 25 ºC
( U N L ES S O T H E R W IS E SP EC I F I E D )
Parameter
S y m b o l
Min
Max
Unit
Peak Repetitive Drain
to Source Voltage
VDSS
1000
V
Operating Temperature
Range
Top
10
55
º C
Ma xi mu m Ra tin g s @ 25 ºC
Ma xi mu m Ra tin g s @ 25 ºC
Ma xi mu m Ra tin g s @ 25 ºC
Ma xi mu m Ra tin g s @ 25 ºC
( U N L ES S O T H E R W IS E SP EC I F I E D )
Description
C o n d it ion s
TYP
Max
Unit
Drain-Source On-State
Resistance, RDS(ON)1
VGS = 10 Vdc,
ID= 1 mAdc
12.5
13.5
ohm
Drain-Source On-State
Resistance, RDS(ON)2
VGS= 7 Vdc,
ID= 5…150
mAdc
TC= 37º C
12.5
ohm
KEY FEATURE S
KEY FEATURE S
KEY FEATURE S
KEY FEATURE S
!"Miniature size, Multi-Chip
Module, MCM
!"Convenient mounting, Ball Grid
Array, BGA
!"Sn63/Pb37 solder bumps
(Alternate attach methods
available)
!"Maximum switch voltage 1000V
APPLICATIONS/BENEFIT
APPLICATIONS/BENEFIT
APPLICATIONS/BENEFIT
APPLICATIONS/BENEFITS
SS
S
!"Three phase switching
!"AC-DC converters
!"Applications utilizing multiple
MOSFET die in multiple or array
configurations
Schematic
Configuration and Dimensions
Top View
0.38” typical
Microsemi
MM196
0.35”
typical
0.050”
max


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