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MRF4427R2 データシート(PDF) 2 Page - Microsemi Corporation |
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MRF4427R2 データシート(HTML) 2 Page - Microsemi Corporation |
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2 / 5 page ![]() MSC1313.PDF 10-25-99 MRF4427, R1, R2 ELECTRICAL SPECIFICATIONS (Tcase = 25 °C) STATIC (off) Symbol Test Conditions Value Min. Typ. Max. Unit BVCEO Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, IB = 0) 20 - - Vdc BVCBO Collector-Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) 40 - - Vdc BVEBO Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) 2.0 - - Vdc ICEO Collector Cutoff Current (VCE = 20 Vdc, VBE = 0 Vdc) - - .02 mA (on) HFE DC Current Gain (IC = 100 mAdc, VCE = 5 Vdc) (IC = 360 mAdc, VCE = 5 Vdc) 10 5.0 - - 200 - VCE(sat) Collector-Emitter Saturation Voltage (IC = 100 mAdc, IB = 20 mA) 60 - mVdc DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit Ftau Current-Gain Bandwidth Product (IC = 50 mAdc, VCE = 12 Vdc, f = 200 MHz) - 1.3 - GHz Cob Output Capacitance (VCB = 12 Vdc, IE = 0, f = 1.0 MHz) - - 3.4 GHz |
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