MRF914 datasheet(1/4 Pages) MICROSEMI

部品番号	MRF914

部品情報	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

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メーカー	MICROSEMI [Microsemi Corporation]

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MSC1325.PDF 10-25-99

MRF914

DESCRIPTION:

Designed primarily for use in High Gain, low noise general purpose amplifiers. Also excellent for high speed switching

applications.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25

°C)

Symbol

Parameter

Value

Unit

VCEO

Collector-Emitter Voltage

12

Vdc

VCBO

Collector-Base Voltage

20

Vdc

VEBO

Emitter-Base Voltage

3.0

Vdc

IC

Collector Current

40

mA

Thermal Data

P

D

Total Device Dissipation @ TA = 25ºC

Derate above 25ºC

200

1.6

mWatts

mW/ ºC

1

2

3

4

1. Emitter

2. Base

3. Collector

4. Case

TO-72

Features

• Silicon NPN, high Frequency, To-72 packaged, Transistor

• High Power Gain - Gmax = 15 dB (typ) @ f = 500 MHz

• Low Noise Figure

NF = 2.5 dB (typ) @ f = 500 MHz

• High FT - 4.5 GHz (typ) @ IC = 20 mAdc

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

RF & MICROWAVE DISCRETE

LOW POWER TRANSISTORS

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New Jersey Semi-Conduct...	MRF914	90Kb / 3P	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

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