ACE1715B datasheet(2/6 Pages) ACE

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ACE1715B

N-Channel Enhancement Mode MOSFET

VER 1.1

Electrical Characteristics TA=25 OC unless otherwise noted

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS=0V, ID=250uA

150

Zero Gate Voltage Drain Current

IDSS

VDS=150V, VGS=0V

Gate Threshold Voltage

IGS(TH)

VGS= VDS, ID=250uA

1.5

2.0

2.5

Gate Leakage Current

IGSS

VGS=±20V, VDS=0V

±100

Drain-Source On-state Resistance

RDS(ON)

VGS=10V, ID=1.5A

400

450

Forward Transconductance

gFS

VDS=15V, ID=1.5A

Diode Forward Voltage

VSD

ISD=2A, VGS=0V

1.2

Maximum Body-Diode Continuous

Current

Switching

Total Gate Charge

VGS=10V,VDS=75V, ID=1.5A

Gate-Source Charge

Qgs

1.4

Gate-Drain Charge

Qgd

2.1

Turn-On Delay Time

td(on)

VGS=10V ,VDS=75V,

RL=75Ω,RGEN=6Ω

Turn-On Rise Time

Turn-Off Delay Time

td(off)

Turn-Off Fall Time

Dynamic

Input Capacitance

Ciss

VGS=0V ,VDS=75V,

F=1MHz

235

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Note:

A: The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with

TA=25°C. The value in any given application depends on the user's specific board design.

B: Repetitive rating, pulse width limited by junction temperature.

C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.

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