Wuxi NCE Power Semiconductor Co., Ltd

Page

v1.0

2

NCE2012

Pb Free Product

http://www.ncepower.com

℃

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

20

-

-

V

Zero Gate Voltage Drain Current

-

-

1

μA

Gate-Body Leakage Current

-

-

±100

nA

On Characteristics

(Note 3)

Gate Threshold Voltage

0.5

0.8

1.2

V

-

6

8

mΩ

Drain-Source On-State Resistance

8

11

Forward Transconductance

20

-

-

S

Dynamic Characteristics

(Note4)

Input Capacitance

-

2000

-

PF

Output Capacitance

-

402

-

PF

Reverse Transfer Capacitance

F=1.0MHz

-

170

-

PF

Switching Characteristics

(Note 4)

Turn-on Delay Time

-

25

-

nS

Turn-on Rise Time

-

15

-

nS

Turn-Off Delay Time

-

25

-

nS

Turn-Off Fall Time

-

15

-

nS

Total Gate Charge

-

42

-

nC

Gate-Source Charge

-

10.8

-

nC

Gate-Drain Charge

-

9.2

-

nC

Drain-Source Diode Characteristics

Diode Forward Voltage

(Note 3)

-

-

1.2

V

Diode Forward Current

(Note 2)

-

-

12

A

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production