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NCP4547IMNTWG データシート(PDF) 4 Page - ON Semiconductor |
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NCP4547IMNTWG データシート(HTML) 4 Page - ON Semiconductor |
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4 / 10 page ![]() NCP4547 http://onsemi.com 4 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit MOSFET On−Resistance VCC = 5.0 V; VIN = 1.8 V RON 4.7 6.1 mW VCC = 5.0 V; VIN = 5.0 V 4.9 6.3 VCC = 3.3 V; VIN = 1.8 V 5.1 6.5 VCC = 3.3 V; VIN = 5.0 V 5.7 7.1 Leakage Current (Note 6) VEN = 0 V; VPOL = VCC; VIN = 6 V ILEAK 0.03 1.0 mA CONTROLLER Supply Standby Current (Note 7) VEN = 0V; VPOL = VCC = 5.5 V ISTBY 5.0 15 mA Supply Dynamic Current (Note 8) VEN = VPOL = VCC IDYN 250 500 mA Bleed Resistance RBLEED 50 100 200 W Input High Voltage − EN & POL VIH 2.0 V Input Low Voltage − EN & POL VIL 0.8 V Pull Down Resistance − EN RPD 40 100 180 kW Pull Up Resistance − POL RPU 40 100 180 kW 6. Average current from VIN to VOUT with MOSFET turned off. 7. Average current from VCC to GND with MOSFET turned off. 8. Average current from VCC to GND after charge up time of MOSFET. SWITCHING CHARACTERISTICS (TJ = 25°C unless otherwise specified, Note 9) Parameter Test Conditions Symbol Min Typ Max Unit VCC = 5.0 V, VIN = 1.8 V Output Slew Rate RL = 10 W, CL = 0.1 mF SR 8.2 kV/s Output Turn−on Delay RL = 10 W, CL = 0.1 mF TON 600 ms Output Turn−off Delay RL = 10 W, CL = 0.1 mF TOFF 2.5 ms VCC = 3.3 V, VIN = 5.0 V Output Slew Rate RL = 10 W, CL = 0.1 mF SR 4.3 kV/s Output Turn−on Delay RL = 10 W, CL = 0.1 mF TON 1300 ms Output Turn−off Delay RL = 10 W, CL = 0.1 mF TOFF 1.1 ms 9. See below figure for Test Circuit and Timing Diagrams. POL EN NCP4547 DELAY SR GND BLEED OFF ON 10% 90% SR = DV VEN 50% 50% 10% 90% Figure 3. Test Circuit and Timing Diagrams VOUT TON TOFF VOUT Dt Dt DV VIN VCC VOUT RL CL |
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