MTSF2P02HD datasheet(7/12 Pages) ONSEMI

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MTSF2P02HD

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t, TIME

Figure 13. Reverse Recovery Time (trr)

di/dt = 300 A/

µs

Standard Cell Density

High Cell Density

trr

SAFE OPERATING AREA

The Forward Biased Safe Operating Area curve (Figure

14) defines the maximum simultaneous drain−to−source

voltage and drain current that a transistor can handle safely

when it is forward biased. Curves are based upon maximum

peak junction temperature and a case temperature (TC) of

°C. Peak repetitive pulsed power limits are determined by

using the thermal response data in conjunction with the

procedures discussed in AN569, “Transient Thermal

Resistance − General Data and Its Use.”

Switching between the off−state and the on−state may

traverse any load line provided neither rated peak current

(IDM) nor rated voltage (VDSS) is exceeded, and that the

transition time (tr, tf) does not exceed 10 µs. In addition the

total power averaged over a complete switching cycle must

not exceed (TJ(MAX) − TC)/(RθJC).

Figure 14. Maximum Rated Forward Biased

Safe Operating Area

0.1

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

RDS(on) LIMIT

THERMAL LIMIT

PACKAGE LIMIT

0.01

VGS = 8 V

SINGLE PULSE

TC = 25°C

0.1

10 ms

100

1 ms

100

µs

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