NTP8G206N datasheet(1/6 Pages) ONSEMI

部品番号	NTP8G206N

部品情報	Power GaN Cascode Transistor

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メーカー	ONSEMI [ON Semiconductor]

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May, 2015 − Rev. 2

1

Publication Order Number:

NTP8G206N/D

NTP8G206N

Power GaN Cascode

Transistor 600 V, 150 mW

Features

• Fast Switching

• Extremely Low Qrr

• Transphorm Inside

• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS

Compliant

ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Parameter

Symbol

NDD

Unit

Drain−to−Source Voltage

VDSS

600

V

Gate−to−Source Voltage

VGS

±18

V

Continuous Drain

Current RqJC

Steady

State

TC = 25°C

ID

17

A

TC = 100°C

12

Power Dissipation –

RqJC

Steady

State

TC = 25°C

PD

96

W

Pulsed Drain

Current

tp = 10 ms

IDM

60

A

Operating Junction and Storage

Temperature

TJ,

TSTG

−55 to

+150

°C

Lead Temperature for Soldering Leads

TL

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE

Parameter

Symbol

Value

Unit

Junction−to−Case (Drain)

RqJC

1.55

°C/W

Junction−to−Ambient Steady State

RqJA

62

°C/W

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V(BR)DSS

RDS(ON) TYP

600 V

150 m

W @ 10 V

N−Channel MOSFET

D (3)

S (2,4)

G (1)

Device

Package

Shipping

ORDERING INFORMATION

NTP8G206NG

TO−220

(Pb−Free)

50 Units / Rail

TO−220

CASE 221A−09

STYLE 10

1

2

3

4

MARKING DIAGRAM

& PIN ASSIGNMENT

A

= Assembly Location

Y

= Year

WW

= Work Week

G

= Pb−Free Package

NTP8G206NG

AYWW

1

Gate

3

Drain

4

Source

2

Source

同様の部品番号 - NTP8G206N

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