AL88070B

Document number: DS36191 Rev. 1 - 2

3 of 18

www.diodes.com

March 2014

© Diodes Incorporated

AL8807B

Absolute Maximum Ratings

Symbol

Parameter

Ratings

Unit

ESD HBM

Human Body Model ESD Protection

2.5

kV

ESD MM

Machine Model ESD Protection

200

V

-0.3 to +40

V

SW Voltage Relative to GND

-0.3 to +40

V

CTRL Pin Input Voltage

-0.3 to +6

V

DC or RMS Switch Current

MSOP-8EP

1.6

A

Peak Switch Current (<10%)

2.5

A

Junction Temperature

+150

°C

Lead Temperature Soldering

+300

°C

Storage Temperature Range

-65 to +150

°C

Caution:

Stresses greater than the 'Absolute Maximum Ratings' specified above, may cause permanent damage to the device. These are stress ratings only;

functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may be

affected by exposure to absolute maximum rating conditions for extended periods of time.

Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD precautions should be taken when handling

and transporting these devices.

Recommended Operating Conditions

Symbol

Parameter

Min

Max

Unit

Operating Input Voltage Relative to GND

6.0

36

V

Voltage High for PWM Dimming Relative to GND

2.5

5.5

V

Voltage Low for PWM Dimming Relative to GND

0

0.4

V

Maximum Switching Frequency

—

1

MHz

Continuous Switch Current

MSOP-8EP

—

1.3

A

Junction Temperature Range

-40

+125

°C

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Internal Regulator Start Up Threshold

—

—

5.9

V

100

—

300

mV

Quiescent Current

Output not switching (Note 4)

—

—

350

µA

Input Supply Current

CTRL pin floating f = 250kHz

—

1.8

5

mA

Set Current Threshold Voltage

—

95

100

105

mV

Set Threshold Hysteresis

—

—

±15

—

mV

SET Pin Input Current

—

16

22

µA

CTRL Pin Input Resistance

Referred to internal reference

—

50

—

kΩ

Internal Reference Voltage



—

2.5

—

V

On Resistance of SW MOSFET

—

0.25

0.4

Ω

SW Rise Time

—

12

—

ns

SW Fall Time

—

20

—

ns

Over-Temperature Shutdown

—

—

155

—

°C

Over-Temperature Hysteresis

—

—

55

—

°C

—

—

0.5

μA

Thermal Resistance Junction-to-

Ambient (Note 5)

(Note 6)

—

69

—

°C/W

Thermal Resistance Junction-to-case

(Note 7)

(Note 6)

—

4.3

—

—

Notes:

5. Refer to figure 39 for the device derating curve.

6. Test condition for MSOP-8EP: Device mounted on FR-4 PCB (51mm x 51mm 2oz copper, minimum recommended pad layout on top layer and

thermal vias to bottom layer with maximum area ground plane. For better thermal performance, larger copper pad for heat-sink is needed.

7. Dominant conduction path is via exposed pad.