AP7176B

Document number: DS35818 Rev.3 - 2

3 of 14

www.diodes.com

April 2014

© Diodes Incorporated

AP7176B

Symbol

Parameter

Rating

Unit

-0.3 to +4.0

V

-0.3 to +7.0

V

V

PG to GND Voltage

-0.3 to +7.0

V

EN, FB to GND Voltage

V

Power Dissipation (SO-8EP)

1.7

W

Power Dissipation (MSOP-8EP)

1.5

Power Dissipation (U-DFN3030-10)

1.9

Maximum Junction Temperature

150

°C

Storage Temperature

-65 to +150

°C

Maximum Lead Soldering Temperature, 10 Seconds

260

°C

Note:

4. Stresses greater than the 'Absolute Maximum Ratings' specified above, may cause permanent damage to the device. These are stress ratings only;

functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may

be affected by exposure to absolute maximum rating conditions for extended periods of time.

Symbol

Parameter

Test Condition

Range

Unit

3.0 to 5.5

V

1.2 to 3.65

V

V

0 to 3

A

8 to 1100

µF

8 to 1700

8 to 2400

0 to 200

mΩ

Ambient Temperature

-40 to +85

°C

Junction Temperature

-40 to +125

°C

Symbol

Parameter

Conditions

AP7176B

Unit

Min

Typ

Max

SUPPLY CURRENT

—

1.0

1.5

mA

EN = GND

—

15

30

µA

—

—

1

µA

POWER-ON-RESET (POR)

2.50

2.70

2.95

V

—

0.4

—

V

0.8

0.9

1.0

V

—

0.5

—

V