BDP950 datasheet(1/4 Pages) INFINEON

部品番号	BDP950

部品情報	PNP Silicon AF Power Transistors

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メーカー	INFINEON [Infineon Technologies AG]

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BDP948, BDP950

1

Jul-06-2001

PNP Silicon AF Power Transistors

For AF driver and output stages

High collector current

High current gain

Low collector-emitter saturation voltage

Complementary types: BDP947, BDP949 (NPN)

VPS05163

1

2

3

4

Type

Marking

Pin Configuration

Package

BDP948

BDP950

BDP 948

BDP 950

1 = B

2 = C

3 = E

4 = C

SOT223

Maximum Ratings

Parameter

Symbol

BDP948

BDP950

Unit

Collector-emitter voltage

VCEO

45

60

V

Collector-base voltage

VCBO

45

60

Emitter-base voltage

VEBO

5

DC collector current

IC

3

A

Peak collector current

ICM

5

Base current

IB

200

mA

Peak base current

IBM

500

Total power dissipation, TS = 99 °C

Ptot

3

W

Junction temperature

Tj

150

°C

Storage temperature

Tstg

-65 ... 150

Thermal Resistance

Junction - soldering point1)

RthJS

17

K/W

1For calculation of RthJA please refer to Application Note Thermal Resistance

同様の部品番号 - BDP950

メーカー	部品番号	データシート	部品情報
Siemens Semiconductor G...	BDP950	39Kb / 4P	PNP Silicon AF Power Transistor (For AF drivers and output stages High collector current High current gain)
Infineon Technologies A...	BDP950	533Kb / 8P	PNP Silicon AF Power Transistors 2008-10-10
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同様の説明 - BDP950

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