STP18N60DM2 datasheet(1/13 Pages) STMICROELECTRONICS

部品番号	STP18N60DM2

部品情報	Extremely high dv/dt ruggedness

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メーカー	STMICROELECTRONICS [STMicroelectronics]

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1 / 13 page

January 2016

DocID027674 Rev 3

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This is information on a product in full production.

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STP18N60DM2

N-

channel 600 V, 0.260 Ω typ., 12 A MDMesh™ DM2

Power MOSFET in a TO-220 package

Datasheet - production data

Figure 1: Internal schematic diagram

Features

Order code

VDS

RDS(on) max.

ID

STP18N60DM2

600 V

0.295 Ω

12 A



Fast-recovery body diode



Extremely low gate charge and input

capacitance



Low on-resistance



100% avalanche tested



Extremely high dv/dt ruggedness



Zener-protected

Applications



Switching applications

Description

This high voltage N-channel Power MOSFET is

part of the MDmesh™ DM2 fast recovery diode

series. It offers very low recovery charge (Qrr)

and time (trr) combined with low RDS(on), rendering

it suitable for the most demanding high efficiency

converters and ideal for bridge topologies and

ZVS phase-shift converters.

Table 1: Device summary

Order code

Marking

Package

Packing

STP18N60DM2

18N60DM2

TO-220

Tube

AM15572v1_tab

D(2, TAB)

G(1)

S(3)

同様の部品番号 - STP18N60DM2

メーカー	部品番号	データシート	部品情報
STMicroelectronics	STP18N60M2	1Mb / 21P	Low gate input resistance 28-Feb-2014
STMicroelectronics	STP18N60M2	861Kb / 27P	N-channel 600 V, 0.255 Ω typ., 13 A MDmesh M2 Power MOSFETs in D2PAK,I2PAK, TO-220 and TO-247 packages 06-Nov-2018

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同様の説明 - STP18N60DM2

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