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STP43N60DM2 データシート(PDF) 1 Page - STMicroelectronics |
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STP43N60DM2 データシート(HTML) 1 Page - STMicroelectronics |
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1 / 13 page  July 2015 DocID026790 Rev 5 1/13 This is information on a product in full production. www.st.com STP43N60DM2 N-channel 600 V, 0.085 Ω typ., 34 A MDmesh™ DM2 Power MOSFET in a TO-220 package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS @ TJmax. RDS(on) max. ID PTOT STP43N60DM2 650 V 0.093 Ω 34 A 250 W • Fast-recovery body diode • Extremely low gate charge and input capacitance • Low on-resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Applications • Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Table 1: Device summary Order code Marking Package Packing STP43N60DM2 43N60DM2 TO-220 Tube |
同様の部品番号 - STP43N60DM2 |
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同様の説明 - STP43N60DM2 |
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