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STGIPS40W60L1 データシート(PDF) 7 Page - STMicroelectronics

部品番号 STGIPS40W60L1
部品情報  Dead time and interlocking function
PDF  21 Pages
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGIPS40W60L1 データシート(HTML) 7 Page - STMicroelectronics

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STGIPS40W60L1
Electrical characteristics
Doc ID 018866 Rev 3
7/21
3
Electrical characteristics
TJ = 25 °C unless otherwise specified.
Table 7.
Inverter part
Symbol
Parameter
Test conditions
Value
Unit
Min.
Typ.
Max.
VCE(sat)
Collector-emitter
saturation voltage
VCC = Vboot = 15 V, VIN = 1 "logic
state", IC = 30 A
-2.0
2.5
V
VCC = Vboot = 15 V, VIN = 1 "logic
state", IC = 30 A, TJ = 125 °C
-1.7
ICES
Collector-cut off current
(VIN = 0 "logic state")
VCE = 550 V, VCC = VBoot = 15 V,
-
500
µA
VF
Diode forward voltage
VIN = 0 "logic state", IF = 30A
-
2.5
V
Switching on/off (inductive load) (1)
ton
Turn-on time
VDD = 410 V,
VCC = Vboot = 15 V,
VIN = 1 "logic state" (see Table 13)
IC = 30 A (see Figure 4 and 5)
-
410
-
ns
tc(on)
Crossover time (on)
-
80
-
toff
Turn-off time
-
320
-
tc(off)
Crossover time (off)
-
125
-
trr
Reverse recovery time
-
115
-
Eon
Turn-on switching losses
-
585
-
µJ
Eoff
Turn-off switching losses
-
600
-
di/dt(on)
Rate of rise of on-state
current
VDD = 410 V, VCC = Vboot = 15 V,
VIN = 1 "logic state" (see Table 13),
IC = 80 A (see Figure 4 and 5)
-
2500
-
A/µs
ton
Turn-on time
VDD = 410 V,
VCC = Vboot = 15 V,
VIN = 1 "logic state" (see Table 13)
IC = 30 A, TJ = 125 °C
(see
Figure 4 and 5)
-
550
-
ns
tc(on)
Crossover time (on)
-
110
-
toff
Turn-off time
-
420
-
tc(off)
Crossover time (off)
-
140
-
trr
Reverse recovery time
-
150
-
Eon
Turn-on switching losses
-
930
-
µJ
Eoff
Turn-off switching losses
-
780
-
di/dt(on)
Rate of rise of on-state
current
VDD = 410 V,
VCC = Vboot = 15 V,
VIN = 1 "logic state" (see Table 13)
IC = 80 A, TJ = 125 °C
(see
Figure 4 and 5)
-
2100
-
A/µs
1.
tON and tOFF include the propagation delay time of the internal drive. tC(ON) and tC(OFF) are the switching time of IGBT itself
under the internally given gate driving condition. Parameter values take into account a 20 nH stray inductance.



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