Characteristics

STPS20L60C

2/10

DocID6427 Rev 4

1

Characteristics

When the diodes 1 and 2 are used simultaneously:

To evaluate the conduction losses use the following equation:

2

(RMS)

Table 2. Absolute ratings (limiting values, per diode)

Symbol

Parameter

Value

Unit

Repetitive peak reverse voltage

60

V

Forward rms current

30

A

Average forward current

= 0.5

Per diode

Per device

10

20

A

220

A

Repetitive peak reverse current

1A

Repetitive peak avalanche power

5800

W

Storage temperature range

-65 to + 175

°C

1.

thermal runaway condition for a diode on its own heatsink

150

°C

dV/dt

Critical rate of rise reverse voltage

10000

V/µs

Table 3. Thermal resistances

Symbol

Parameter

Value

Unit

Junction to case

Per diode

Total

1.6

0.85

C/W

Coupling

0.1

C/W

Table 4. Static electrical characteristics (per diode)

Symbol

Parameter

Tests conditions

Min.

Typ.

Max.

Unit

(1)

1.

Reverse leakage current

350

µA

65

95

mA

(1)

Forward voltage drop

0.6

V

0.48

0.56

0.74

0.62

0.7

dPtot

dTj

---------------

1

Rth j

a

–



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