Electrical characteristics

STP12N50M2

4/13

DocID026516 Rev 1

2

Electrical characteristics

(T

C

= 25 °C unless otherwise specified)

Table 5. On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V

(BR)DSS

Drain-source

breakdown voltage

I

D

= 1 mA, V

GS

= 0

500

V

I

DSS

Zero gate voltage

drain current

V

GS

= 0, V

DS

= 500 V

1

μA

V

GS

= 0, V

DS

= 500 V,

T

C

=125 °C

100

μA

I

GSS

Gate-body leakage

current

V

DS

= 0, V

GS

= ± 25 V

±10

μA

V

GS(th)

Gate threshold voltage

V

DS

= V

GS

, I

D

= 250 μA

234

V

R

DS(on)

Static drain-source

on-resistance

V

GS

= 10 V, I

D

= 5 A

0.325

0.38

Ω

Table 6. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

C

iss

Input capacitance

V

GS

= 0, V

DS

= 100 V,

f = 1 MHz

-

560

-

pF

C

oss

Output capacitance

-

33

-

pF

C

rss

Reverse transfer

capacitance

-1

-

pF

C

oss eq.

(1)

1.

C

oss eq.

is defined as a constant equivalent capacitance giving the same charging time as C

oss

when V

DS

increases from 0 to 80% V

DSS

Equivalent output

capacitance

V

GS

= 0, V

DS

= 0 to 400 V

-

125

-

pF

R

G

Intrinsic gate

resistance

f = 1 MHz open drain

-

6.8

-

Ω

Q

g

Total gate charge

V

DD

= 400 V, I

D

= 10 A,

V

GS

= 10 V (see

Figure 15)

-15

-

nC

Q

gs

Gate-source charge

-

3

-

nC

Q

gd

Gate-drain charge

-

8.3

-

nC