STB33N60DM2 datasheet(1/20 Pages) STMICROELECTRONICS

部品番号	STB33N60DM2

部品情報	N-channel 600 V, 0.110 Ω typ., 24 A MDmesh™ DM2 Power MOSFET in D²PAK, TO-220 and TO-247 packages

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メーカー	STMICROELECTRONICS [STMicroelectronics]

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1 / 20 page

November 2015

DocID026854 Rev 2

1/20

This is information on a product in full production.

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STB33N60DM2, STP33N60DM2,

STW33N60DM2

N-

channel 600 V, 0.110 Ω typ., 24 A MDmesh™ DM2

Power MOSFET in D²PAK, TO-220 and TO-247 packages

Datasheet - production data

Figure 1: Internal schematic diagram

Features

Order code

VDS @ TJmax.

RDS(on) max.

ID

STB33N60DM2

650 V

0.130 Ω

24 A

STP33N60DM2

650 V

0.130 Ω

24 A

STW33N60DM2

650 V

0.130 Ω

24 A



Fast-recovery body diode



Extremely low gate charge and input

capacitance



Low on-resistance



100% avalanche tested



Extremely high dv/dt ruggedness



Zener-protected

Applications



Switching applications

Description

These high voltage N-channel Power MOSFETs

are part of the MDmesh™ DM2 fast recovery

diode series. They offer very low recovery charge

(Qrr) and time (trr) combined with low RDS(on),

rendering them suitable for the most demanding

high efficiency converters and ideal for bridge

topologies and ZVS phase-shift converters.

Table 1: Device summary

Order code

Marking

Package

Packing

STB33N60DM2

33N60DM2

D²PAK

Tape and reel

STP33N60DM2

33N60DM2

TO-220

Tube

STW33N60DM2

33N60DM2

TO-247

Tube

同様の部品番号 - STB33N60DM2

メーカー	部品番号	データシート	部品情報
Inchange Semiconductor ...	STB33N60DM2	336Kb / 2P	N-Channel MOSFET Transistor

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同様の説明 - STB33N60DM2

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