| データシートサーチシステム |
|
STBP110CVDJ6F データシート(PDF) 11 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
STBP110CVDJ6F データシート(HTML) 11 Page - STMicroelectronics |
|
11 / 40 page ![]() STBP110 Operation Doc ID 018687 Rev 3 11/40 3.5 Thermal shutdown If the STBP110 internal junction temperature exceeds the Toff threshold, the internal MOSFET switch is turned off and the fault indication output FLT is driven low. To improve thermal robustness, this circuit has a 20 °C hysteresis, THYS(off). Due to the internal reverse diode, the thermal shutdown is not functional for the reverse current. |
|
リンク URL |
| ALLDATASHEETはお客様のビジネスに役立ちますか? [ DONATE ] |
Alldatasheetは | 広告 | お問い合わせ | プライバシーポリシー | データシートへのリンク | リンク交換 | メーカーリスト All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |