STW70N60DM2 datasheet(5/12 Pages) STMICROELECTRONICS

部品番号	STW70N60DM2

部品情報	Extremely high dv/dt ruggedness

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メーカー	STMICROELECTRONICS [STMicroelectronics]

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STW70N60DM2

Electrical characteristics

DocID026843 Rev 4

5/12

Table 8: Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

ISDM(1)

Source-drain current (pulsed)

264

VSD(2)

Forward on voltage

VGS = 0 V, ISD = 66 A

1.6

trr

Reverse recovery time

ISD = 66 A, di/dt = 100 A/µs,

VDD = 60 V (see Figure 16:

"Test circuit for inductive

load switching and diode

recovery times")

150

Qrr

Reverse recovery charge

0.75

µC

IRRM

Reverse recovery current

10.5

trr

Reverse recovery time

ISD = 66 A, di/dt = 100 A/µs,

VDD = 60 V, Tj = 150 °C

(see Figure 16: "Test circuit

for inductive load switching

and diode recovery times")

250

Qrr

Reverse recovery charge

2.5

µC

IRRM

Reverse recovery current

20.7

Notes:

(1) Pulse width is limited by safe operating area.

(2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.

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