NCE0260P datasheet(1/7 Pages) NCEPOWER

部品番号	NCE0260P

部品情報	NCE N-Channel Enhancement Mode Power MOSFET

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メーカー	NCEPOWER [Wuxi NCE Power Semiconductor Co., Ltd]

ホームページ	http://www.ncepower.com

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NCE0260P

Pb Free Product

http://www.ncepower.com

Wuxi NCE Power Semiconductor Co., Ltd

Page

v1.0

1

NCE N-Channel Enhancement Mode Power MOSFET

Description

The NCE0260P uses advanced trench technology and design

to provide excellent RDS(ON) with low gate charge. It can be

used in a wide variety of applications.

General Features

●

VDS =200V,ID =60A

RDS(ON) <32mΩ @ VGS=10V

●

High density cell design for ultra low Rdson

●

Fully characterized avalanche voltage and current

●

Good stability and uniformity with high EAS

●

Excellent package for good heat dissipation

●

Special process technology for high ESD capability

Application

●

Power switching application

●

Hard switched and high frequency circuits

●

Uninterruptible power supply

100% UIS TESTED!

100% ∆Vds TESTED!

Schematic diagram

Marking and pin assignment

TO-3P top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

NCE0260P

TO-3P

-

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

200

V

Gate-Source Voltage

VGS

±20

V

Drain Current-Continuous

ID

60

A

Drain Current-Continuous(TC=100℃)

ID (100℃)

42

A

Pulsed Drain Current

IDM

280

A

Maximum Power Dissipation

PD

300

W

Derating factor

2.0

W/℃

Single pulse avalanche energy

(Note 5)

EAS

506

mJ

Operating Junction and Storage Temperature Range

TJ,TSTG

-55 To 175

℃

同様の部品番号 - NCE0260P

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NCE0260P データシート(PDF) 1 Page - Wuxi NCE Power Semiconductor Co., Ltd

NCE0260P データシート(HTML) 1 Page - Wuxi NCE Power Semiconductor Co., Ltd

同様の部品番号 - NCE0260P

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NCE0260P データシート(PDF) 1 Page - Wuxi NCE Power Semiconductor Co., Ltd

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同様の部品番号 - NCE0260P

同様の説明 - NCE0260P

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