ACE1020M datasheet(1/7 Pages) ACE

部品番号	ACE1020M

部品情報	N-Channel 200-V MOSFET

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メーカー	ACE [ACE Technology Co., LTD.]

ホームページ	http://www.ace-ele.com

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ACE1020M

N-Channel 200-V MOSFET

VER 1.1

1

Description

ACE1020M uses advanced trench technology to provide excellent RDS(ON).

This device particularly suits for low voltage application such as power management of desktop

computer or notebook computer power management, DC/DC converter.

Features

• Low r

DS(on) trench technology

• Low thermal impedance

• Fast switching speed

Applications:

• PoE Power Sourcing Equipment

• PoE Powered Devices

• Telecom DC/DC converters

• White LED boost converters

Absolute Maximum Ratings

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

200

V

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current

TC=25°C

ID

10

A

Pulsed Drain Current

b

IDM

40

A

Continuous Source Current (Diode Conduction)

a

IS

10

A

Power Dissipation

TC=25°C

PD

50

W

Operating Junction and Storage Temperature Range

TJ, Tstg

-55 to 175

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Maximum Unit

Maximum Junction-to-Ambient

a

RθJA

40

°C/W

Maximum Junction-to-Case

RθJC

3

Notes

a. Surface Mounted on 1” x 1” FR4 Board, drain pad using 2 oz copper, value dependent on PC board thermal characteristics.

b. Pulse width limited by maximum junction temperature.

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