ACE5212A datasheet(1/7 Pages) ACE

部品番号	ACE5212A

部品情報	N-Channel Enhancement Mode MOSFET

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メーカー	ACE [ACE Technology Co., LTD.]

ホームページ	http://www.ace-ele.com

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ACE5212A

N-Channel Enhancement Mode MOSFET

VER 1.1

1

Description

The ACE5212A is the N-Channel enhancement mode power field effect transistors are produced using

high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance and provide superior

switching performance.

These devices are particularly suited for low voltage applications such as notebook computer power

management and other battery powered circuits where high-side switching, low in-line power loss, and

resistance to transients are needed.

Features

• 20V/0.65A, R

DS(ON)=380

mΩ@VGS=4.5V

• 20V/0.55A,R

DS(ON)=450mΩ@VGS=2.5V

• 20V/0.45A, R

DS(ON) =800mΩ@VGS=1.8V

• Super high density cell design for extremely low R

DS (ON)

• Exceptional on-resistance and maximum DC current capability

Application

• Drivers : Relays/Solenoids/Lamps/Hammers

• Power Supply Converter Circuits

• Load/Power Switching Cell Phones, Pagers

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