EC103D1 datasheet(5/8 Pages) KERSEMI

部品番号	EC103D1

部品情報	Very sensitive gate thyristor intended to be interfaced directly to low power gate trigger circuits, with very low drive current capability

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メーカー	KERSEMI [Kersemi Electronic Co., Ltd.]

ホームページ	http://www.kersemi.com

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EC103D1

Characteristics

Table 5:

Characteristics

Tj =25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

IGT

gate trigger current

VD = 12 V; IT = 0.1 A; gate open

circuit

-3

µA

latching current

VD = 12 V; IGT = 0.5 mA; RGK =1kΩ

-2

holding current

on-state voltage

IT = 1.0 A

1.2

1.35

VGT

gate trigger voltage

IT = 10 mA; gate open circuit

VD = 12 V

0.5

0.8

VD =VDRM (max); Tj = 125 °C

0.2

0.3

off-state current

VD =VDRM (max); VR =VRRM (max);

Tj = 125 °C; RGK =1kΩ

100

µA

reverse current

100

µA

Dynamic characteristics

dVD/dt

rate of rise of off-state

voltage

VD = 0.67 VDRM(max);Tcase = 125 °C;

exponential waveform; RGK =1kΩ

-25

µs

tgt

gate controlled turn-on

time

ITM = 2.0 A; VD =VDRM(max);

IG = 10 mA; dIG/dt = 0.1 A /µs

-2

µs

commutated turn-off time

VD = 0.67 VDRM(max); Tj = 125 °C;

ITM = 1.6 A; VR =35V;

dITM/dt=30A /µs; dVD/dt=2V/µs;

RGK =1kΩ

100

µs

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