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RT3T77M データシート(PDF) 1 Page - Isahaya Electronics Corporation |
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RT3T77M データシート(HTML) 1 Page - Isahaya Electronics Corporation |
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1 / 4 page ![]() PRELIMINARY RT3T77M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type ISAHAYA ELECTRONICS CORPORATION DESCRIPTION RT3T77M is compound transistor built with RT1N140 chip and RT1P140 chip in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inverted circuit, switching circuit, interface circuit, driver circuit . OUTLINE DRAWING Unit:mm MAXIMUM RATING (Ta=25℃) (RTr1_NPN, RTr2_PNP) SYMBOL PARAMETER RATING UNIT VCBO Collector to Base voltage 50 V VEBO Emitter to Base voltage 6 V VCEO Collector to Emitter voltage 50 V IC Collector current 100 mA ICM Peak Collector current 200 mA PC Collector dissipation(Total, Ta=25℃) 150 mW Tj Junction temperature + 150 ℃ Tstg Storage temperature -55~+150 ℃ ※ PNP built in transistor of ”-”sign is abbreviation. MARKING 7 T7 1 2 3 6 5 4 . TERMINAL CONNECTOR ①: EMITTER1 ②: BASE1 ③: COLLECTOR2 ④: EMITTER2 ⑤: BASE2 ⑥ :COLLECTOR1 JEITA:SC-88 R1 RTr1 ① ② ④ ⑤ RTr2 ③ R1 ⑥ |
同様の部品番号 - RT3T77M |
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同様の説明 - RT3T77M |
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