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SP3220EB データシート(PDF) 2 Page - Sipex Corporation |
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SP3220EB データシート(HTML) 2 Page - Sipex Corporation |
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2 / 19 page ![]() Rev: A Date:12/11/03 SP3220EB/EU +3.0 to +5.0V RS-232 Transceivers © Copyright 2002 Sipex Corporation 2 NOTE 1: V+ and V- can have maximum magnitudes of 7V, but their absolute difference cannot exceed 13V. ABSOLUTE MAXIMUM RATINGS These are stress ratings only and functional operation of the device at these ratings or any other above those indicated in the operation sections of the specifications below is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect reliability and cause permanent damage to the device. V CC.............................................................-0.3V to +6.0V V+ (NOTE 1)..............................................-0.3V to +7.0V V- (NOTE 1).............................................+0.3V to -7.0V V+ + |V-| (NOTE 1)...................................................+13V I CC (DC VCC or GND current)..........................+100mA Input Voltages TxIN, EN .............................................. -0.3V to +6.0V RxIN ................................................................... +25V Output Voltages TxOUT ............................................................. +13.2V RxOUT ......................................... -0.3V to (V CC+0.3V) Short-Circuit Duration TxOUT ...................................................... Continuous Storage Temperature ....................... -65°C to +150°C Power Dissipation Per Package 16-pin SSOP (derate 9.69mW/oCabove+70oC) ........ 775mW 16-pin TSSOP (derate 10.5mW/oC above +70oC) ..... 840mW 16-pin Wide SOIC (derate 11.2mW/oC above+70oC) 900mW SPECIFICATIONS Unless otherwise noted, the following specifications apply for V CC = +3.0V to +5.0V with TAMB = TMIN to TMAX. Typical Values apply at V CC = +3.3V or +5.0V and TAMB = 25 oC, C1-4=0.1µF. R E T E M A R A P. N I M. P Y T. X A MS T I N US N O I T I D N O C S C I T S I R E T C A R A H C C D t n e r r u C y l p p u S3 . 00 . 1A mT , d a o l o n B M A 5 2 + = o V , C C C V 3 . 3 = V r o D N G = N I x T C C t n e r r u C y l p p u S n w o d t u h S0 . 10 1 µA , D N G = N D H ST B M A 5 2 + = o V , C C C V 3 . 3 + = V r o V 0 = N I x T C C S T U P T U O R E V I E C E R D N A S T U P N I C I G O L W O L d l o h s e r h T c i g o L t u p n I8 . 0V 2 e t o N , N D H S , N E , N I x T H G I H d l o h s e r h T c i g o L t u p n I0 . 2V V C C r o 2 e t o N , V 3 . 3 =2 e t o N , V 0 . 5 t n e r r u C e g a k a e L t u p n I1 0 . 0 ±0 . 1 ± µA , N D H S , N E , N I x T T B M A 5 2 + = o V C N I V o t V 0 = C C t n e r r u C e g a k a e L t u p t u O5 0 . 0 ±0 1 ± µA V d e l b a s i D s r e v i e c e R T U O V o t V 0 = C C W O L e g a t l o V t u p t u O4 . 0V I T U O A m 6 . 1 = H G I H e g a t l o V t u p t u OV C C 6 . 0 -V C C 1 . 0 -V I T U O A m 0 . 1 - = S T U P T U O R E V I R D g n i w S e g a t l o V t u p t u O0 . 5 ±4 . 5 ±V k 3 Ω , s t u p t u o r e v i r d ll a t a d n u o r g o t d a o l T B M A 5 2 + = oC e c n a t s i s e R t u p t u O0 0 3 Ω V C C T , V 0 = - V = + V = T U O =+ V 2 t n e r r u C t i u c r i C - t r o h S t u p t u O5 3 ±0 6 ±A mV T U O V 0 = t n e r r u C e g a k a e L t u p t u O5 2 ± µA V T U O =+ V , V 2 1 C C d e l b a s i d s r e v i r d , V 5 . 5 o t V 0 = V CC GND |
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