DMN2009LSS

Document number: DS31409 Rev. 7 - 2

2 of 5

www.diodes.com

October 2013

© Diodes Incorporated

DMN2009LSS

Characteristic

Symbol

Value

Units

Drain-Source Voltage

20

V

Gate-Source Voltage

12

V

Drain Current (Note 5)

Steady State

12

9.6

A

Pulsed Drain Current (Note 6)

42

A

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

2

W

Thermal Resistance, Junction to Ambient

62.5

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

20





V

Zero Gate Voltage Drain Current





1

μA

Gate-Source Leakage





100

nA

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

0.5



1.2

V

Static Drain-Source On-Resistance









8

9

12

mΩ

Forward Transconductance



27



S

Diode Forward Voltage

0.5

0.7

1.2

V

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance



2555



pF

Output Capacitance



523



pF

Reverse Transfer Capacitance



496



pF

Gate Resistance



1.1



Ω

SWITCHING CHARACTERISTICS (Note 8)

Total Gate Charge



28.9

58.3



nC

Gate-Source Charge



3.7



Gate-Drain Charge



11.4



Notes:

6. Pulse width

10μS, Duty Cycle 1%.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.