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TLP3073F データシート(PDF) 1 Page - Toshiba Semiconductor |
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TLP3073F データシート(HTML) 1 Page - Toshiba Semiconductor |
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1 / 19 page ![]() TLP3073,TLP3073F 1 Photocouplers GaAs Infrared LED & Photo Triac TLP3073,TLP3073F TLP3073,TLP3073F TLP3073,TLP3073F TLP3073,TLP3073F Start of commercial production 2015-08 1. 1. 1. 1. Applications Applications Applications Applications • Solid-State Relays • Triac Drivers • Home Electric Appliances • Office Equipment 2. 2. 2. 2. General General General General The TLP3073 consists of a non zero crossing photo triac, optically coupled to a gallium arsenide infrared emitting diode. The TLP3073 is housed in the DIP6 package and guarantees insulation thickness of 0.4 mm (min). Therefore, the TLP3073 meets the reinforced insulation class requirements of international safety standards. 3. 3. 3. 3. Features Features Features Features (1) Halogen-free (2) Peak off-state voltage: 800 V (min) (3) Non zero crossing functionary (NZC) (4) Trigger LED current: 5 mA (max) (5) On-state current: 100 mA (max) (6) Isolation voltage: 5000 Vrms (min) (7) Safety standards UL-approved: UL1577, File No.E67349 cUL-approved: CSA Component Acceptance Service No.5A File No.E67349 VDE-approved: EN60747-5-5, EN60065 or EN60950-1 (Note 1) (Note 1) (Note 1) (Note 1) CQC-approved: GB4943.1, GB8898 Japan Factory Note 1: When a VDE approved type is needed, please designate the Option (D4) Option (D4) Option (D4) Option (D4). Table Table Table Table 3.1 3.1 3.1 3.1 Mechanical Parameters Mechanical Parameters Mechanical Parameters Mechanical Parameters Characteristics Creepage distances Clearance distances Internal isolation thickness 7.62 mm pitch TLP3073 7.0 (min) 7.0 (min) 0.4 (min) 10.16 mm pitch TLP3073F 8.0 (min) 8.0 (min) 0.4 (min) Unit mm 2016-02-03 Rev.4.0 ©2016 Toshiba Corporation |
同様の部品番号 - TLP3073F |
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同様の説明 - TLP3073F |
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