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MMBT4401-G データシート(PDF) 2 Page - Comchip Technology |
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MMBT4401-G データシート(HTML) 2 Page - Comchip Technology |
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2 / 6 page ![]() QW-BTR32 Page 2 REV:B General Purpose Transistor Company reserves the right to improve product design , functions and reliability without notice. Electrical Characteristics (@TA=25°C unless otherwise noted) Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector-Emitter saturation voltage Base-Emitter saturation voltage Transition frequency Delay time Rise time Storage time Fall time Units Symbol Parameter Min. Conditions IC=100μA, IE=0 IC=1mA, IB=0 IE=100μA, IC=0 IC=150mA, IB=15mA IC=150mA, IB=15mA IC=150mA, IB1=15mA VCC=30V, VBE(off)=-2V, IB1=IB2=15mA VCC=30V, IC=150mA Max. V(BR)CBO VCE(sat) fT td tr tS tf V(BR)CEO V(BR)EBO VBE(sat) 60 40 6 250 DC current gain VCE=1V, IC=150mA hFE 100 300 0.4 0.95 15 20 225 30 V V V V V Collector cut-off current Base cut-off current VCB=50V, IE=0 VEB=5V, IC=0 ICBO IEBO 100 100 nA nA Collector cut-off current VCE=30V, IB=0 ICEO 100 nA MHz nS nS nS nS VCE=10V, IC=20mA f=100MHz |
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