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1SS413CT データシート(PDF) 2 Page - Toshiba Semiconductor |
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1SS413CT データシート(HTML) 2 Page - Toshiba Semiconductor |
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2 / 5 page ![]() 1SS413CT 2 5. 5. 5. 5. Electrical Characteristics (Unless otherwise specified, T Electrical Characteristics (Unless otherwise specified, T Electrical Characteristics (Unless otherwise specified, T Electrical Characteristics (Unless otherwise specified, Taaaa = 25 = 25 = 25 = 25 )))) Characteristics Forward voltage Forward voltage Forward voltage Reverse current Total capacitance Symbol VF(1) VF(2) VF(3) IR Ct Test Condition IF = 1 mA IF = 5 mA IF = 50 mA VR = 20 V VR = 0 V, f = 1 MHz Min Typ. 0.33 0.38 0.50 3.9 Max 0.55 0.5 Unit V V V µA pF 6. 6. 6. 6. Marking Marking Marking Marking Fig. Fig. Fig. Fig. 6.1 6.1 6.1 6.1 Marking Marking Marking Marking 7. 7. 7. 7. Usage Considerations Usage Considerations Usage Considerations Usage Considerations • Schottky barrier diodes (SBDs) have reverse leakage greater than other types of diodes. This makes SBDs more susceptible to thermal runaway under high-temperature and high-voltage conditions. Thus, both forward and reverse power losses of SBDs should be considered for thermal and safety design. 8. 8. 8. 8. Land Pattern Dimensions (for reference only) Land Pattern Dimensions (for reference only) Land Pattern Dimensions (for reference only) Land Pattern Dimensions (for reference only) (Unit: mm) (Unit: mm) (Unit: mm) (Unit: mm) 2014-03-11 Rev.1.0 |
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