2SB883 datasheet(1/2 Pages) ISC

部品番号	2SB883

部品情報	High DC Current Gain- : hFE = 2000(Min)@ IC= -7A

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Website：www.iscsemi.cn

1

isc & iscsemi is registered trademark

isc Silicon PNP Darlington Power Transistor

2SB883

DESCRIPTION

·High DC Current Gain-

: hFE = 2000(Min)@ IC= -7A

·Wide Area of Safe Operation

·Low Collector-Emitter Saturation Voltage-

: VCE(sat) = -1.5V(Max)@ IC= -7A

·Complement to Type 2SD1193

APPLICATIONS

·Designed for motor drivers, printer hammer drivers, relay

drivers, voltage regulator control applications.

ABSOLUTE MAXIMUM RATINGS (Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-70

V

VCEO

Collector-Emitter Voltage

-60

V

VEBO

Emitter-Base Voltage

-6

V

IC

Collector Current-Continuous

-15

A

ICM

Collector Current-Peak

-20

A

PC

Collector Power Dissipation

TC=25℃

70

W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

同様の部品番号 - 2SB883

メーカー	部品番号	データシート	部品情報
Sanyo Semicon Device	2SB883	113Kb / 4P	Driver Applications?????????
New Jersey Semi-Conduct...	2SB883	77Kb / 2P	Silicon PNP Darlington Power Transistor

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同様の説明 - 2SB883

メーカー	部品番号	データシート	部品情報
Samsung semiconductor	TIP105	262Kb / 6P	PNP (HIGH DC CURRENT GAIN MIN
MAKO SEMICONDUCTOR CO.,...	2SC1623	107Kb / 2P	High DC current gain hFE 200(Typ)VCE 6V, IC 1mA
Inchange Semiconductor ...	2SB1531	101Kb / 2P	High DC Current Gain- : hFE= 5000(Min)@IC= -5A
	2SB881	102Kb / 2P	High DC Current Gain- : hFE = 2000(Min)@ IC= -3.5A
	2SB882	102Kb / 2P	High DC Current Gain- : hFE = 2000(Min)@ IC= -5A
	2SB897	93Kb / 2P	High DC Current Gain- : hFE = 1000(Min)@ IC= -10A
	2SB955	101Kb / 2P	High DC Current Gain- : hFE = 1000(Min)@ IC= -5A
	2N4908	104Kb / 2P	DC Current Gain-: hFE= 20-80 @IC= -4A
	2N4907	104Kb / 2P	DC Current Gain-: hFE= 20-80 @IC= -4A
SHIKUES Electronics	BC846	1,020Kb / 4P	High current gain, Excellent hFE Linearity