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HMC7992 データシート(PDF) 5 Page - Analog Devices

部品番号 HMC7992
部品情報  Nonreflective, Silicon SP4T Switch, 0.1 GHz to 6.0 GHz
PDF  13 Pages
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メーカー  AD [Analog Devices]
ホームページ  http://www.analog.com
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HMC7992 データシート(HTML) 5 Page - Analog Devices

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Data Sheet
HMC7992
Rev. 0 | Page 5 of 13
ABSOLUTE MAXIMUM RATINGS
Table 4.
Parameter
Rating
Bias Voltage Range (VDD)
−0.3 V to +5.5 V
Control Voltage Range (A, B)
−0.5 V to VDD + (+0.5 V)
RF Input Power,1 3.3 V to 5 V (see
Figure 2 and Figure 3)
Through Path
34 dBm
Terminated Path
28 dBm
Hot Switching
30 dBm
Channel Temperature
135°C
Storage Temperature Range
−65°C to +150°C
Maximum Peak Reflow Temperature
(MSL3)
260°C
Thermal Resistance (Channel to
Package Bottom)
Through Path
115°C
Terminated Path
200°C
ESD Sensitivity
Human Body Model (HBM)
2 kV (Class 2)
Charged Device Model (CDM)
1.25 kV
1
For recommended operating conditions, see Table 1.
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
36
34
32
30
28
26
24
0.1
1
FREQUENCY (GHz)
10
THROUGH AMR
TERMINATED AMR
Figure 2. Maximum RF Input Power vs. Frequency
35
29
31
33
27
25
23
21
19
0.1
1
FREQUENCY (GHz)
10
THROUGH (AT 85°C)
THROUGH (AT 105°C)
TERMINATED (AT 85°C)
TERMINATED (AT 105°C)
Figure 3. Power Derating vs. Frequency
ESD CAUTION



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