2N4907 datasheet(1/2 Pages) ISC

部品番号	2N4907

部品情報	DC Current Gain-: hFE= 20-80 @IC= -4A

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

1

isc Silicon PNP Power Transistors

2N4907

DESCRIPTION

·

Low Collector Saturation Voltage-

: VCE(sat)= -0.75V(Max.)@ IC= -4A

·

DC Current Gain-

: hFE= 20-80 @IC= -4A

APPLICATIONS

·

Designed for general purpose use in power amplifier and

switching circuits.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

2.0

℃

/W

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-40

V

VCEO

Collector-Emitter Voltage

-40

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-10

A

IB

Base Current-Continuous

-4

A

PC

Collector Power Dissipation@TC=25℃

150

W

TJ

Junction Temperature

200

℃

Tstg

Storage Temperature

-65~200

℃

同様の部品番号 - 2N4907

メーカー	部品番号	データシート	部品情報
Seme LAB	2N4907	11Kb / 1P	Bipolar PNP Device in a Hermetically sealed TO3 Metal Package
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New Jersey Semi-Conduct...	2N4907	131Kb / 2P	Silicon PNP Power Transistors

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同様の説明 - 2N4907

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MAKO SEMICONDUCTOR CO.,...	2SC1623	107Kb / 2P	High DC current gain hFE 200(Typ)VCE 6V, IC 1mA
Inchange Semiconductor ...	2SB1531	101Kb / 2P	High DC Current Gain- : hFE= 5000(Min)@IC= -5A
	2SB881	102Kb / 2P	High DC Current Gain- : hFE = 2000(Min)@ IC= -3.5A
	2SB882	102Kb / 2P	High DC Current Gain- : hFE = 2000(Min)@ IC= -5A
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	2SB897	93Kb / 2P	High DC Current Gain- : hFE = 1000(Min)@ IC= -10A
	2SB955	101Kb / 2P	High DC Current Gain- : hFE = 1000(Min)@ IC= -5A
	2N4908	104Kb / 2P	DC Current Gain-: hFE= 20-80 @IC= -4A
SHIKUES Electronics	BC846	1,020Kb / 4P	High current gain, Excellent hFE Linearity
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