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2SC2443 データシート(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC2443 データシート(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn 2 isc Silicon NPN Power Transistor 2SC2433 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= ∞ 120 V V(BR)CBO Collector-Base Breakdown Voltage IC= 50μA; IE= 0 120 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 15A; IB= 1.5A 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 15A; IB= 1.5A 2.0 V ICBO Collector Cutoff Current VCB= 120V ; IE= 0 50 μA ICEO Collector Cutoff Current VCE= 120V ; IE= 0 1 mA IEBO Emitter Cutoff Current VEB= 4V; IC= 0 50 μA hFE-1 DC Current Gain IC= 3A ; VCE= 5V 35 200 hFE-2 DC Current Gain IC= 30A ; VCE= 5V 7 COB Output Capacitance IE= 0; VCB= -10V; f= 1.0MHz 1000 pF fT Current-Gain—Bandwidth Product IC= 2A ; VCE= 10V 60 MHz Switching Times tr Rise Time IC= -15A; IB1= -IB2= -1.5A; RL= 2Ω 0.10 μs tstg Storage Time 0.10 μs tf Fall Time 0.10 μs |
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