2SB996 datasheet(1/2 Pages) ISC

部品番号	2SB996

部品情報	Good Linearity of hFE

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Website：www.iscsemi.cn

isc & iscsemi is registered trademark

1

isc Silicon PNP Power Transistor

2SB996

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -80V(Min)

·Good Linearity of hFE

·Complement to Type 2SD1356

APPLICATIONS

·Power amplifier applications.

·Recommended for 20~25W high-fidelity audio frequency

amplifier output stage.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-80

V

VCEO

Collector-Emitter Voltage

-80

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-4

A

IB

Base Current-Continuous

-0.4

A

PC

Collector Power Dissipation

@TC=25℃

30

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55~150

℃

同様の部品番号 - 2SB996

メーカー	部品番号	データシート	部品情報
New Jersey Semi-Conduct...	2SB996	127Kb / 2P	Silicon PNP Power Transistor

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