2SC3834Y datasheet(1/3 Pages) ISC

部品番号	2SC3834Y

部品情報	Good Linearity of hFE

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Website：www.iscsemi.cn

isc Silicon NPN Power Transistor

2SC3834Y

DESCRIPTION

·Low Collector Saturation Voltage

: VCE(sat)= 0.5V(Max)@ IC=3A

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 120V (Min)

·Good Linearity of hFE

APPLICATIONS

·Designed for use in humidifier , DC/DC converter and

general purpose applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

200

V

VCEO

Collector-Emitter Voltage

120

V

VEBO

Emitter-Base Voltage

8

V

IC

Collector Current-Continuous

7

A

ICM

Collector Current-Pulse

14

A

IB

Base Current-Continuous

3

A

PC

Collector Power Dissipation

@ TC=25℃

50

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

同様の部品番号 - 2SC3834Y

メーカー	部品番号	データシート	部品情報
Sanken electric	2SC3834	23Kb / 1P	Silicon NPN Triple Diffused Planar Transistor(Humidifier, DC-DC Converter, and General Purpose)
Unisonic Technologies	2SC3834	126Kb / 3P	SWITCH NPN TRANSISTOR
Savantic, Inc.	2SC3834	134Kb / 4P	Silicon NPN Power Transistors
Quanzhou Jinmei Electro...	2SC3834	124Kb / 3P	Silicon NPN Power Transistor
Unisonic Technologies	2SC3834	199Kb / 4P	SWITCH NPN TRANSISTOR

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