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2SC3738 データシート(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC3738 データシート(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Website:www.iscsemi.cn isc Silicon NPN Power Transistor 2SC3738 DESCRIPTION ·High Voltage, High Speed Switching ·Wide Area of Safe Operation ·Good Linearity of hFE APPLICATIONS ·Designed for high speed switching and horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICP Collector Current-Peak 15 A IB Base Current-Continuous 5 A PC Collector Power Dissipation @ TC=25℃ 175 W Collector Power Dissipation @ Ta=25℃ 3.5 TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
同様の部品番号 - 2SC3738 |
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同様の説明 - 2SC3738 |
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