2N6763 datasheet(1/2 Pages) ISC

部品番号	2N6763

部品情報	VGS Rated at 짹20V

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc & iscsemi is registered trademark

1

isc N-Channel MOSFET Transistor

2N6763

DESCRIPTION

·VGS Rated at ±20V

·Silicon Gate for fast switching speeds

·I

DSS 、RDS(ON) ,specified at elevated temperature

·Low drive reqirements

APPLICATIONS

designed for high power ,high speed application ,such as

switching applies,UPS,AC and DC motor controls ,

relay and high energy pulse circuits.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

ARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage (VGS=0)

60

V

VGS

Gate-Source Voltage

±20

V

ID

Drain Current-continuous@ TC=37℃

31

A

Ptot

Total Dissipation@TC=25℃

150

W

Tj

Max. Operating Junction Temperature

-55~150

℃

Tstg

Storage Temperature Range

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

0.83

℃/W

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同様の部品番号 - 2N6763

メーカー	部品番号	データシート	部品情報
Fairchild Semiconductor	2N6763	140Kb / 5P	N-Channel Power MOSFETs, 38A, 60V/100V
New Jersey Semi-Conduct...	2N6763	93Kb / 2P	N-Channel Enhancement-Mode Power MOS Field-Effect Transistors

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