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S3JB データシート(PDF) 1 Page - Taiwan Memory Technology |
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S3JB データシート(HTML) 1 Page - Taiwan Memory Technology |
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1 / 4 page ![]() CREAT BY ART FEATURES - Glass passivated chip junction - Ideal for automated placement - Low forward voltage drop - High surge current capability - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: DO-214AA (SMB) Molding compound, UL flammability classification rating 94V-0 Moisture sensitivity level: level 1, per J-STD-020 Part no. with suffix "H" means AEC-Q101 qualified Packing code with suffix "G" means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.09 g (approximately) VRRM 50 100 200 400 600 800 1000 V VRMS 35 70 140 280 420 560 700 V VDC 50 100 200 400 600 800 1000 V IF(AV) A trr μs CJ pF RθJL °C/W TJ °C TSTG °C Note 1: Pulse test with PW=300μs, 1% duty cycle Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. Document Number: DS_D1410018 Version: J15 Maximum reverse current @ rated VR TJ=25°C TJ=125°C Taiwan Semiconductor 1.15 10 250 Typical junction capacitance (Note 3) 40 V IR μA Storage temperature range - 55 to +150 Typical reverse recovery time (Note 2) 1.5 Typical thermal resistance 10 - 55 to +150 Operating junction temperature range Maximum instantaneous forward voltage (Note 1) @ 3 A VF Maximum average forward rectified current 3 Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 80 A Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) PARAMETER SYMBOL S3 AB S3 BB S3AB - S3MB 3A, 50V - 1000V Surface Mount Rectifiers S3 DB S3 GB S3 JB S3 KB - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC DO-214AA (SMB) S3 MB Unit |
同様の部品番号 - S3JB |
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同様の説明 - S3JB |
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