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2SD1575 データシート(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SD1575 データシート(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn 1 isc Silicon NPN Power Transistor 2SD1575 DESCRIPTION · High Breakdown Voltage- : VCBO= 1200V (Min) · High Switching Speed · High Reliability · Wide Area of Safe Operation APPLICATIONS · Designed for horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCES Collector-Emitter Voltage 1200 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 2 A ICP Collector Current-Peak 6 A IBP Base Current-Peak 2.5 A IBP Reverse Base Current-Peak -1.5 A PC Collector Power Dissipation @ TC=25℃ 40 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
同様の部品番号 - 2SD1575 |
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同様の説明 - 2SD1575 |
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