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CT3400A-R3 データシート(PDF) 3 Page - CT Micro International Corporation

部品番号 CT3400A-R3
部品情報  N-Channel Enhancement MOSFET
PDF  11 Pages
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メーカー  CTMICRO [CT Micro International Corporation]
ホームページ  http://www.ct-micro.com/
Logo CTMICRO - CT Micro International Corporation

CT3400A-R3 データシート(HTML) 3 Page - CT Micro International Corporation

  CT3400A-R3 Datasheet HTML 1Page - CT Micro International Corporation CT3400A-R3 Datasheet HTML 2Page - CT Micro International Corporation CT3400A-R3 Datasheet HTML 3Page - CT Micro International Corporation CT3400A-R3 Datasheet HTML 4Page - CT Micro International Corporation CT3400A-R3 Datasheet HTML 5Page - CT Micro International Corporation CT3400A-R3 Datasheet HTML 6Page - CT Micro International Corporation CT3400A-R3 Datasheet HTML 7Page - CT Micro International Corporation CT3400A-R3 Datasheet HTML 8Page - CT Micro International Corporation CT3400A-R3 Datasheet HTML 9Page - CT Micro International Corporation Next Button
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CT Micro
Rev 4
Proprietary & Confidential
Page 3
Aug, 2015
CT3400A-R3
N-Channel Enhancement MOSFET
Electrical Characteristics T
A = 25°C (unless otherwise specified)
Static Characteristics
Symbol
Parameters
Test Conditions
Min
Typ
Max
Units
Notes
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID= 250µA
30
-
-
V
IDSS
Drain-Source Leakage Current
VDS = 30V, VGS = 0V
-
-
1
µ A
IGSS
Gate-Source Leakage Current
VGS = ±12V, VDS = 0V
-
-
±100
nA
On Characteristics
Symbol
Parameters
Test Conditions
Min
Typ
Max
Units
Notes
RDS(ON)
Drain-Source On-Resistance
VGS = 10V, ID = 6.0A
-
23.0
28
m
3
VGS = 4.5V, ID = 5.0A
-
26.0
35
m
VGS = 2.5V, ID = 4.0A
-
35.0
50
m
VGS(TH)
Gate-Source Threshold Voltage
VGS = VDS, ID =250µA
0.7
-
1.4
V
3
Dynamic Characteristics
Symbol
Parameters
Test Conditions
Min
Typ
Max
Units
Notes
CISS
Input Capacitance
VDS = 10V ,
VGS = 0V,
f=1MHz
-
595
-
pF
COSS
Output Capacitance
-
60
-
CRSS
Reverse Transfer Capacitance
-
48
-
Switching Characteristics
Symbol
Parameters
Test Conditions
Min
Typ
Max
Units
Notes
TD(ON)
Turn-On Delay Time
VDS = 10V ,
VGS = 4.5V,
RG = 6 ,
ID =5.8A
-
2.1
-
ns
TR
Rise Time
-
31.0
-
TD(OFF)
Turn-Off Delay Time
-
16.5
-
TF
Fall Time
-
6.5
QG
Total Gate Charge
VDS = 10V ,
VGS = 4.5V,
ID = 5.8A
-
69
-
nC
QGS
Gate-Source Charge
-
1.4
-
QGD
Gate-Drain (Miller) Charge
-
2.1
-



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