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CT3400-R3 データシート(PDF) 1 Page - CT Micro International Corporation

部品番号 CT3400-R3
部品情報  N-Channel Enhancement MOSFET
PDF  11 Pages
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メーカー  CTMICRO [CT Micro International Corporation]
ホームページ  http://www.ct-micro.com/
Logo CTMICRO - CT Micro International Corporation

CT3400-R3 データシート(HTML) 1 Page - CT Micro International Corporation

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CT Micro
Rev 6
Proprietary & Confidential
Page 1
Aug. 2015
CT3400-R3
N-Channel Enhancement MOSFET
Package Outline
Schematic
Features
• Drain-Source Breakdown Voltage VDSS 30 V
• Drain-Source On-Resistance
RDS(ON) 23.5m
Ω, at VGS= 10V, IDS= 6.0A
RDS(ON) 26.5m
Ω, at VGS= 4.5V, IDS= 5.0A
• Continuous Drain Current at TA=25℃ ID = 5.8A
• Advanced high cell density Trench Technology
• RoHS Compliance & Halogen Free
Applications
• Power Management
• LED Display
• DC-DC System
• LCD Panel
Description
The CT3400-R3 uses high performance Trench
Technology to provide excellent RDS(ON) and low gate
charge which is suitable for most of the synchronous
buck converter applications .
Gate
Source
Drain
Gate
Drain
Source


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