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CDBS0130 データシート(PDF) 1 Page - Comchip Technology

部品番号 CDBS0130
部品情報  SMD Schottky Barrier Diode
PDF  2 Pages
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メーカー  COMCHIP [Comchip Technology]
ホームページ  http://www.comchiptech.com
Logo COMCHIP - Comchip Technology

CDBS0130 データシート(HTML) 1 Page - Comchip Technology

  CDBS0130 Datasheet HTML 1Page - Comchip Technology CDBS0130 Datasheet HTML 2Page - Comchip Technology  
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Io = 100mA
VR = 30 Volt s
CDBS0130
Features
Designed for mounting on small surface
Extremely thin package
Low stored charge
Majority carrier conduction
Mechanical data
Case: 0805(2012)Standard package,
molded plastic
Terminals: Solder plated, solderable per
MIL-STD-750, method 2026
Polarity: Indicated by cathode band.
Mounting position: Any.
Weight: 0.0048 gram. ( approximately)
SMD Schottky Barrier Diode
SMD Schottky Barrier Diode
Unit
V
uA
pF
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Conditions
I F = 100 mA DC
VR = 30 V
f = 1MHz, and 10 VDC reverse voltage
Symbol
VF
IR
CT
Min Typ
10
Max
0.44
30
www.comchip.com.tw
COMCHIP
COMCHIP
Page 1
Parameter
Repetitive peak reverse voltage
Reverse voltage
Average forward current
Forward current , surge peak
Power Dissipation
Storage temperature
Junction temperature
Conditions
Symbol
VRRM
VR
Io
IFSM
PD
TSTG
T j
Min
-40
-40
Max
35
30
100
250
+125
+125
Typ
1000
Unit
V
V
mA
mA
mW
Maximum Rating ( at T A = 25
unless otherwise noted )
C
C
Electrical Characteristics ( at T A = 25
unless otherwise noted )
C
C
C
C
0.087(2.20)
0.079(2.00)
0.016(0.40) Typ
0.055(1.40)
0.047(1.20)
0.043 (1.10)
0.035(0.90)
0.008(R0.20) Typ.
Dimensions in inches and (millimeter)
0805(2012)
8.3 ms single half sine-wave superimposed
on rate load ( JEDEC method )
RDS0208007-C


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