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TP3465V データシート(PDF) 12 Page - National Semiconductor (TI) |
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TP3465V データシート(HTML) 12 Page - National Semiconductor (TI) |
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12 / 17 page ![]() Device Electrical Characteristics Absolute Maximum Ratings If MilitaryAerospace specified devices are required please contact the National Semiconductor Sales OfficeDistributors for availability and specifications VCC to GND 7V Input Voltage b 03V to VCC a 03V DC Input Current II g 50 mA Storage Temperature Range b 65 Cto a150 C Lead Temperature (Soldering 10 Sec) 300 C ESD Rating t 1500V Electrical Characteristics Unless otherwise noted limits in BOLD characters are electrical testing limits at VCC e 50V and TA ea25 C All other limits are assured by correlation with other production tests andor product design and characterization for VCC e 50V g5% and TA e 0 Cto a70 C All signals are referenced to GND Symbol Parameter Conditions Limits Units Min Max VIL Input Low Voltage All Inputs 08 V VIH Input High Voltage All Inputs 20 V VOL Output Low Voltage CS0 – 7 IOL e 1mA SK SO IOL e 4mA 04 V AD(70) IOL e 2mA VOH Output High Voltage CS0 – 7 IOH e 1mA SK SO IOH e 4mA 24 V AD(70) IOH e 2mA IIH High Level Input Current All Inputs b 10 m A GND k VIN k VCC IIL Low Level Input Current All Inputs a 10 m A IOZ Output Current in High-Z AD(70) SO g 20 m A ICC Dynamic Supply Current CKIN e SK e 1 MHz 07 mA CKIN e SK e 20 MHz 4 12 |
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