2SK1809 datasheet(1/2 Pages) ISC

部品番号	2SK1809

部品情報	Low on-resistance

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc & iscsemi is registered trademark

1

isc N-Channel MOSFET Transistor

2SK1809

DESCRIPTION

·Drain Current ID= 5A@ TC=25℃

·Drain Source Voltage

: VDSS= 600V(Min)

·Fast Switching Speed

·Low on-resistance

·For switchinggregulator,DC-DC Converter

APPLICATIONS

·High speed power switching

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage (VGS=0)

600

V

VGS

Gate-Source Voltage

±30

V

ID

Drain Current-continuous@ TC=25℃

5

A

Ptot

Total Dissipation@TC=25℃

60

W

Tj

Max. Operating Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

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同様の部品番号 - 2SK1809

メーカー	部品番号	データシート	部品情報
Hitachi Semiconductor	2SK1809	32Kb / 6P	Silicon N-Channel MOS FET
Renesas Technology Corp	2SK1809	1Mb / 9P	Silicon N Channel MOS FET Sep 07, 2005

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