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DMN3018SSD データシート(PDF) 1 Page - Diodes Incorporated

部品番号 DMN3018SSD
部品情報  Low On-Resistance
PDF  6 Pages
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メーカー  DIODES [Diodes Incorporated]
ホームページ  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMN3018SSD データシート(HTML) 1 Page - Diodes Incorporated

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DMN3018SSD
Document number: DS35583 Rev. 3 - 2
1 of 6
www.diodes.com
January 2013
© Diodes Incorporated
DMN3018SSD
30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
RDS(ON) max
ID max
TA = +25°C
30V
22mΩ @ VGS = 10V
6.7A
30mΩ @ VGS = 4.5V
5.2A
Description
This MOSFET has been designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
•
Backlighting
•
Power Management Functions
•
DC-DC Converters
Features
•
Low On-Resistance
•
100% UIS (Avalanche) Rated
•
ESD Protected Gate
•
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
•
Halogen and Antimony Free. “Green” Device (Note 3)
•
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
•
Case: SO-8
•
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020
•
Terminal Connections Indicator: See diagram
•
Terminals: Finish
⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
•
Weight: 0.008 grams (approximate)
Ordering Information (Note 4)
Part Number
Case
Packaging
DMN3018SSD-13
SO-8
2500/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
SO-8
Top View
Source
Gate
Protection
Diode
Gate
Drain
Body
Diode
Equivalent Circuit per Element
Top View
Pin Configuration
ESD PROTECTED
D1
D2
D2
D1
S2
G2
S1
G1
Top View
Logo
Part no.
Year: “11” = 2011
1
4
8
5
N3018SD
YY WW
Xth week: 01 ~ 53


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