IRF151 datasheet(1/2 Pages) ISC

部品番号	IRF151

部品情報	High Power,High Speed Applications

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc & iscsemi is registered trademark

1

isc N-Channel MOSFET Transistor

IRF151

DESCRIPTION

·Drain Current ID=40A@ TC=25℃

·Drain Source Voltage-

: VDSS= 60V(Min)

·Static Drain-Source On-Resistance

: RDS(on) =0.055Ω(Max)

·High Power,High Speed Applications

APPLICATIONS

·Switching power supplies

·UPS

·Motor controls

·High energy pulse circuits.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage (VGS=0)

60

V

VGS

Gate-Source Voltage

±20

V

ID

Drain Current-continuous@ TC=25℃

40

A

Ptot

Total Dissipation@TC=25℃

150

W

Tj

Max. Operating Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

0.83

℃/W

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同様の部品番号 - IRF151

メーカー	部品番号	データシート	部品情報
Samsung semiconductor	IRF151	210Kb / 5P	N-CHANNEL POWER MOSFETS
Fairchild Semiconductor	IRF151	125Kb / 4P	N-Channel Power MOSFETs, 40 A, 60 V/100 V
IXYS Corporation	IRF151	44Kb / 1P	HIGH VOLTAGE POWER MOSFET DIE
Texas Instruments	IRF151	656Kb / 21P	DUAL MOSFET DRIVER JULY 1986
List of Unclassifed Man...	IRF151R	208Kb / 5P	AVALANCHE ENERGY RATED N-CHANNEL POWER MOSFETS

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