IRF225 datasheet(1/2 Pages) ISC

部品番号	IRF225

部品情報	High Speed Applications

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc & iscsemi is registered trademark

1

isc N-Channel MOSFET Transistor

IRF225

DESCRIPTION

·Drain Current ID=3.3A@ TC=25℃

·Drain Source Voltage-

: VDSS= 250V(Min)

·Static Drain-Source On-Resistance

: RDS(on) =1.5Ω(Max)

·High Speed Applications

APPLICATIONS

·Switching power supplies

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage (VGS=0)

250

V

VGS

Gate-Source Voltage

±20

V

ID

Drain Current-continuous@ TC=25℃

3.3

A

Ptot

Total Dissipation@TC=25℃

40

W

Tj

Max. Operating Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

3.12

℃/W

Rth j-a

Thermal Resistance,Junction to Ambient

30

℃/W

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