IRF251 datasheet(1/2 Pages) ISC

部品番号	IRF251

部品情報	Nanosecond Switching Speed

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc & iscsemi is registered trademark

1

isc N-Channel MOSFET Transistor

IRF251

DESCRIPTION

·Drain Current

–I

D=30A@ TC=25℃

·Drain Source Voltage-

: VDSS= 150V(Min)

·Static Drain-Source On-Resistance

: RDS(on) =0.085Ω(Max)

·Nanosecond Switching Speed

APPLICATIONS

·Switching power supplies

·Switching converters,motor driver,relay driver

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage (VGS=0)

150

V

VGS

Gate-Source Voltage

±20

V

ID

Drain Current-continuous@ TC=25℃

30

A

Ptot

Total Dissipation@TC=25℃

150

W

Tj

Max. Operating Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

0.83

℃/W

Rth j-a

Thermal Resistance,Junction to Ambient

30

℃/W

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同様の部品番号 - IRF251

メーカー	部品番号	データシート	部品情報
Samsung semiconductor	IRF251	215Kb / 5P	N-CHANNEL POWER MOSFETS
IXYS Corporation	IRF251	49Kb / 1P	High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series
New Jersey Semi-Conduct...	IRF251	136Kb / 3P	N-CHANNE POWER MOSFETS
New Jersey Semi-Conduct...	IRF251	137Kb / 3P	N-CHANNEL POWER MOSFETS

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