IRF620A datasheet(1/2 Pages) ISC

部品番号	IRF620A

部品情報	isc N-Channel MOSFET Transistor

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc & iscsemi is registered trademark

1

isc N-Channel MOSFET Transistor

IRF620A

FEATURES

·Low RDS(on) = 0.626

Ω(TYP)

·Lower Input Capacitance

·Improved Gate Charge

·Extended Safe Operating Area

·Rugged Gate Oxide Technology

DESCRIPTION

·Designed for use in switch mode power supplies and general

purpose applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage

200

V

VGS

Gate-Source Voltage-Continuous

±30

V

ID

Drain Current-Continuous

5

A

IDM

Drain Current-Single Pluse

18

A

PD

Total Dissipation @TC=25℃

47

W

TJ

Max. Operating Junction Temperature

-55~150

℃

Tstg

Storage Temperature

-55~150

℃

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同様の部品番号 - IRF620A

メーカー	部品番号	データシート	部品情報
Fairchild Semiconductor	IRF620A	259Kb / 7P	Advanced Power MOSFET

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